ZnO Nanorods as Antireflection Layers in Metal-Insulator-Semiconductor Solar Cells
نویسندگان
چکیده
One of the most promising techniques for manufacturing low-cost solar cells is a solution processing method. In this study, it proposed that solution-grown ZnO nanorods (NRs) are used as antireflection coatings on metal-insulator-semiconductor (MIS) with sol-gel SiO2. Except Al electrodes prepared by thermal evaporation, no other vacuum process was utilized during fabrication. The NRs were produced hydrothermal method and suppressed Fresnel reflection. With NRs, observed average reflectance MIS cell decreased from 38.7% to 15.8%, short circuit density (JSC) increased 5.22 mA/cm2 6.71 (28.4% enhancement). Meanwhile, open voltage (VOC) improved 0.39 V 0.47 owing passivation effect. exhibited 35.5% efficiency enhancement compared without NRs. performance improvement in could be due multiple reflections an incident light between vertically arranged then coupling into cell. results show potential application cells.
منابع مشابه
Metal-Insulator-Semiconductor Photodetectors
The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regi...
متن کاملLeakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers
InN-based metal-insulator-semiconductor (MIS) structures were prepared with Al2O3 as the gate oxides. Surface morphologies of InN films are improved with increasing Mg doping concentrations. At high frequencies, the measured capacitance densities deviate from the real ones with turning frequencies inversely proportional to series resistances. An ultralow leakage current density of 1.35 × 10(-9)...
متن کاملUsing spacer layers to control metal and semiconductor absorption in ultrathin solar cells with plasmonic substrates
Niraj N. Lal,1 Hang Zhou,2 Matthew Hawkeye,1 Jatin K. Sinha,3 Philip N. Bartlett,3 Gehan A. J. Amaratunga,2 and Jeremy J. Baumberg1 1NanoPhotonics Center, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom 2Centre for Advanced Photonics and Engineering, University of Cambridge CB3 0HE, United Kingdom 3School of Chemistry, University of Southampton SO17 1BJ, United ...
متن کاملMetal-insulator transition in a doped semiconductor
Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in bulk samples of phosphorus-doped silicon establish that the transition from metal to insulator is continuous, but sharper than predicted by scaling theories of localization. The divergence of the dielectric susceptibility as the transition is approached from below also points out problems in curre...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11132068